IP Library Granted Patent US 6,066,547
Granted Patent Utility
US 6,066,547 · App. 08/879,386

Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method

Inventor: Masashi Maekawa
Patented Case View Patent ↗
Granted: May 23, 2000 Filed: Jun 20, 1997
Inventor
Masashi Maekawa
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,066,547
App. No.
08/879,386
Filed
1997-06-20
Granted
2000-05-23
Kind
A