IP Library Granted Patent US 6,066,877
Granted Patent Utility
US 6,066,877 · App. 08/779,176

Vertical power MOSFET having thick metal layer to reduce distributed resistance

Inventors: Richard K. Williams, Mohammad Kasem
Patented Case View Patent ↗
Granted: May 23, 2000 Filed: Jan 6, 1997
Inventors
Richard K. Williams
Mohammad Kasem
Assignee (at issue)
SILICONIX INCORPORATED

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Quick Facts
Patent No.
US 6,066,877
App. No.
08/779,176
Filed
1997-01-06
Granted
2000-05-23
Kind
A