Granted Patent
Utility
US 6,068,928 · App. 09/030,406
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
Inventors:
Martin Schrems, Kai Wurster, Klaus-Dieter Morhard, Joachim Hoepfner
Patented Case
View Patent ↗
Granted: May 30, 2000
Filed: Feb 25, 1998
Inventors
Martin Schrems
Kai Wurster
Klaus-Dieter Morhard
Joachim Hoepfner
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.