Granted Patent
Utility
US 6,069,021 · App. 09/270,749
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
Inventors:
Kazutaka Terashima, Suzuka Nishimura, Takuji Tsuzaki, Takashi Udagawa
Patented Case
View Patent ↗
Granted: May 30, 2000
Filed: Mar 17, 1999
Inventors
Kazutaka Terashima
Suzuka Nishimura
Takuji Tsuzaki
Takashi Udagawa
Assignee (at issue)
Showa Denko K.K.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.