Granted Patent
Utility
US 6,071,765 · App. 08/915,269
Method of forming polycrystalline silicon layer on substrate and surface treatment apparatus thereof
Inventors:
Takashi Noguchi, Tohru Ogawa, Yuji Ikeda
Patented Case
View Patent ↗
Granted: Jun 6, 2000
Filed: Aug 20, 1997
Inventors
Takashi Noguchi
Tohru Ogawa
Yuji Ikeda
Assignee (at issue)
SONY GROUP CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.