IP Library Granted Patent US 6,071,782
Granted Patent Utility
US 6,071,782 · App. 09/023,383

Partial silicidation method to form shallow source/drain junctions

Inventors: Jer-Shen Maa, Sheng Teng Hsu, Chien-Hsiung Peng
Patented Case View Patent ↗
Granted: Jun 6, 2000 Filed: Feb 13, 1998
Inventors
Jer-Shen Maa
Sheng Teng Hsu
Chien-Hsiung Peng
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,071,782
App. No.
09/023,383
Filed
1998-02-13
Granted
2000-06-06
Kind
A