Granted Patent
Utility
US 6,071,809 · App. 09/161,176
Methods for forming high-performing dual-damascene interconnect structures
Inventor:
Bin Zhao
Patented Case
View Patent ↗
Granted: Jun 6, 2000
Filed: Sep 25, 1998
Inventor
Bin Zhao
Assignee (at issue)
Rockwell Semiconductor Systems, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.