Granted Patent
Utility
US 6,071,832 · App. 08/822,117
Method for manufacturing a reliable semiconductor device using ECR-CVD and implanting hydrogen ions into an active region
Inventor:
Hiraku Ishikawa
Patented Case
View Patent ↗
Granted: Jun 6, 2000
Filed: Mar 21, 1997
Inventor
Hiraku Ishikawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.