Granted Patent
Utility
US 6,072,216 · App. 09/071,729
Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
Inventors:
Richard K. Williams, Wayne B. Grabowski
Patented Case
View Patent ↗
Granted: Jun 6, 2000
Filed: May 1, 1998
Inventors
Richard K. Williams
Wayne B. Grabowski
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.