Granted Patent
Utility
US 6,072,223 · App. 09/145,582
Circuit and method for a memory cell using reverse base current effect
Inventor:
Wendell P. Noble
Patented Case
View Patent ↗
Granted: Jun 6, 2000
Filed: Sep 2, 1998
Inventor
Wendell P. Noble
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.