Granted Patent
Utility
US 6,074,479 · App. 09/327,383
Silicon single crystal wafer annealing method and equipment, and silicon single crystal wafer and manufacturing method related thereto
Inventors:
Naoshi Adachi, Takehiro Hisatomi, Masakazu Sano
Patented Case
View Patent ↗
Granted: Jun 13, 2000
Filed: Jun 8, 1999
Inventors
Naoshi Adachi
Takehiro Hisatomi
Masakazu Sano
Assignee (at issue)
SUMITOMO METAL INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.