IP Library Granted Patent US 6,074,479
Granted Patent Utility
US 6,074,479 · App. 09/327,383

Silicon single crystal wafer annealing method and equipment, and silicon single crystal wafer and manufacturing method related thereto

Inventors: Naoshi Adachi, Takehiro Hisatomi, Masakazu Sano
Patented Case View Patent ↗
Granted: Jun 13, 2000 Filed: Jun 8, 1999
Inventors
Naoshi Adachi
Takehiro Hisatomi
Masakazu Sano
Assignee (at issue)
SUMITOMO METAL INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,074,479
App. No.
09/327,383
Filed
1999-06-08
Granted
2000-06-13
Kind
A