Granted Patent
Utility
US 6,074,956 · App. 09/076,663
Method for preventing silicide residue formation in a semiconductor device
Inventors:
Wenge Yang, Lewis Shen
Patented Case
View Patent ↗
Granted: Jun 13, 2000
Filed: May 12, 1998
Inventors
Wenge Yang
Lewis Shen
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.