Granted Patent
Utility
US 6,077,574 · App. 08/912,468
Plasma CVD process for forming a fluorine-doped SiO.sub.2 dielectric film
Inventor:
Tatsuya Usami
Patented Case
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Granted: Jun 20, 2000
Filed: Aug 18, 1997
Inventor
Tatsuya Usami
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.