IP Library Granted Patent US 6,080,639
Granted Patent Utility
US 6,080,639 · App. 09/199,265

Semiconductor device containing P-HDP interdielectric layer

Inventors: Richard J. Huang, Chi Chang
Patented Case View Patent ↗
Granted: Jun 27, 2000 Filed: Nov 25, 1998
Inventors
Richard J. Huang
Chi Chang
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,080,639
App. No.
09/199,265
Filed
1998-11-25
Granted
2000-06-27
Kind
A