Granted Patent
Utility
US 6,084,264 · App. 09/200,197
Trench MOSFET having improved breakdown and on-resistance characteristics
Inventor:
Mohamed N. Darwish
Patented Case
View Patent ↗
Granted: Jul 4, 2000
Filed: Nov 25, 1998
Inventor
Mohamed N. Darwish
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.