Granted Patent
Utility
US 6,087,205 · App. 08/985,875
Method of fabricating staggered thin film transistor with an improved ohmic contact structure
Inventor:
Shuki Yamamori
Patented Case
View Patent ↗
Granted: Jul 11, 2000
Filed: Dec 5, 1997
Inventor
Shuki Yamamori
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.