Granted Patent
Utility
US 6,087,206 · App. 09/187,425
Method of fabricating a top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen
Inventor:
Koji Hamada
Patented Case
View Patent ↗
Granted: Jul 11, 2000
Filed: Nov 6, 1998
Inventor
Koji Hamada
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.