Granted Patent
Utility
US 6,087,232 · App. 09/135,645
Fabrication method of lateral double diffused MOS transistors
Inventors:
Jong Dae Kim, Sang Ki Kim, Jin Gun Koo, Kee-Soo Nam
Patented Case
View Patent ↗
Granted: Jul 11, 2000
Filed: Aug 18, 1998
Inventors
Jong Dae Kim
Sang Ki Kim
Jin Gun Koo
Kee-Soo Nam
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.