Granted Patent
Utility
US 6,087,721 · App. 08/963,647
Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
Inventors:
Atef Akhnoukh, Petrus M. A. W. Moors
Patented Case
View Patent ↗
Granted: Jul 11, 2000
Filed: Nov 3, 1997
Inventors
Atef Akhnoukh
Petrus M. A. W. Moors
Assignee (at issue)
U.S. Philips Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.