Granted Patent
Utility
US 6,090,661 · App. 09/045,633
Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
Inventors:
Dung-Ching Perng, Yauh-Ching Liu
Patented Case
View Patent ↗
Granted: Jul 18, 2000
Filed: Mar 19, 1998
Inventors
Dung-Ching Perng
Yauh-Ching Liu
Assignee (at issue)
LSI Logic Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.