Granted Patent
Utility
US 6,090,707 · App. 09/389,535
Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact
Inventors:
Sujit Sharan, Gurtej S. Sandhu, Terry L. Gilton
Patented Case
View Patent ↗
Granted: Jul 18, 2000
Filed: Sep 2, 1999
Inventors
Sujit Sharan
Gurtej S. Sandhu
Terry L. Gilton
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.