Granted Patent
Utility
US 6,096,478 · App. 09/256,615
Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern
Inventor:
Mitsuharu Yamana
Patented Case
View Patent ↗
Granted: Aug 1, 2000
Filed: Feb 23, 1999
Inventor
Mitsuharu Yamana
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.