Granted Patent
Utility
US 6,096,607 · App. 09/135,123
Method for manufacturing silicon carbide semiconductor device
Inventor:
Katsunori Ueno
Patented Case
View Patent ↗
Granted: Aug 1, 2000
Filed: Aug 17, 1998
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.