Granted Patent
Utility
US 6,103,603 · App. 09/065,487
Method of fabricating gate electrodes of twin-well CMOS device
Inventor:
Suk-Bin Han
Patented Case
View Patent ↗
Granted: Aug 15, 2000
Filed: Apr 24, 1998
Inventor
Suk-Bin Han
Assignee (at issue)
LG Semicon Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.