Granted Patent
Utility
US 6,110,775 · App. 09/018,181
Process for fabrication of a dram cell having a stacked capacitor
Inventors:
Toyokazu Fujii, Takatoshi Yasui
Patented Case
View Patent ↗
Granted: Aug 29, 2000
Filed: Feb 3, 1998
Inventors
Toyokazu Fujii
Takatoshi Yasui
Assignee (at issue)
Matsushita Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.