Granted Patent
Utility
US 6,115,296 · App. 09/228,275
Semiconductor memory device capable of reducing a leak current flowing through a substrate
Inventor:
Yasuhiro Ando
Patented Case
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Granted: Sep 5, 2000
Filed: Jan 11, 1999
Inventor
Yasuhiro Ando
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.