Granted Patent
Utility
US 6,124,176 · App. 09/330,163
Method of producing a semiconductor device with reduced fringe capacitance and short channel effect
Inventor:
Mitsuhiro Togo
Patented Case
View Patent ↗
Granted: Sep 26, 2000
Filed: Jun 11, 1999
Inventor
Mitsuhiro Togo
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.