Granted Patent
Utility
US 6,124,213 · App. 09/192,476
Process of fabricating semiconductor device having ashing step for photo-resist mask in plasma produced from N.sub.x H.sub.y gas
Inventors:
Tatsuya Usami, Kouichi Ohto, Yasuhiko Ueda
Patented Case
View Patent ↗
Granted: Sep 26, 2000
Filed: Nov 17, 1998
Inventors
Tatsuya Usami
Kouichi Ohto
Yasuhiko Ueda
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.