Granted Patent
Utility
US 6,124,608 · App. 08/992,961
Non-volatile trench semiconductor device having a shallow drain region
Inventors:
Yowjuang W. Liu, Yu Sun, Donald L. Wollesen
Patented Case
View Patent ↗
Granted: Sep 26, 2000
Filed: Dec 18, 1997
Inventors
Yowjuang W. Liu
Yu Sun
Donald L. Wollesen
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.