Granted Patent
Utility
US 6,124,613 · App. 09/071,152
SOI-MOS field effect transistor that withdraws excess carrier through a carrier path silicon layer
Inventor:
Tetsuya Kokubun
Patented Case
View Patent ↗
Granted: Sep 26, 2000
Filed: May 4, 1998
Inventor
Tetsuya Kokubun
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.