IP Library Granted Patent US 6,133,099
Granted Patent Utility
US 6,133,099 · App. 09/018,441

Vertical MOSFET and method of manufacturing thereof

Inventor: Masami Sawada
Patented Case View Patent ↗
Granted: Oct 17, 2000 Filed: Feb 4, 1997
Inventor
Masami Sawada
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,133,099
App. No.
09/018,441
Filed
1997-02-04
Granted
2000-10-17
Kind
A