Granted Patent
Utility
US 6,133,609 · App. 09/251,455
High-voltage thin-film transistor with sub-gate elements
Inventor:
Kenichi Nakamura
Patented Case
View Patent ↗
Granted: Oct 17, 2000
Filed: Feb 17, 1999
Inventor
Kenichi Nakamura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.