Granted Patent
Utility
US 6,133,619 · App. 09/144,521
Reduction of silicon oxynitride film delamination in integrated circuit inter-level dielectrics
Inventors:
Kashmir Sahota, Richard J. Huang, David Matsumoto, Mark T. Ramsbey, Yu Sun, Judith Quan Rizzuto
Patented Case
View Patent ↗
Granted: Oct 17, 2000
Filed: Aug 31, 1998
Inventors
Kashmir Sahota
Richard J. Huang
David Matsumoto
Mark T. Ramsbey
Yu Sun
Judith Quan Rizzuto
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.