Granted Patent
Utility
US 6,136,722 · App. 09/172,860
Plasma etching method for forming hole in masked silicon dioxide
Inventor:
Hidetaka Nambu
Patented Case
View Patent ↗
Granted: Oct 24, 2000
Filed: Oct 15, 1998
Inventor
Hidetaka Nambu
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.