IP Library Granted Patent US 6,139,628
Granted Patent Utility
US 6,139,628 · App. 09/056,622

Method of forming gallium nitride crystal

Inventors: Masaaki Yuri, Tetsuzo Ueda, Takaaki Baba
Patented Case View Patent ↗
Granted: Oct 31, 2000 Filed: Apr 8, 1998
Inventors
Masaaki Yuri
Tetsuzo Ueda
Takaaki Baba
Assignee (at issue)
Matsushita Electronics Corporation

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Quick Facts
Patent No.
US 6,139,628
App. No.
09/056,622
Filed
1998-04-08
Granted
2000-10-31
Kind
A