IP Library › Granted Patent US 6,140,177
Granted Patent Utility
US 6,140,177 · App. 09/242,153

Process of forming a semiconductor capacitor including forming a hemispherical grain statistical mask with silicon and germanium

Inventors: Herbert Schafer, Martin Franosch, Reinhard Stengl, Volker Lehmann, Hans Reisinger, Hermann Wendt
Patented Case View Patent ↗
Granted: Oct 31, 2000 Filed: Feb 9, 1999
Inventors
Herbert Schafer
Martin Franosch
Reinhard Stengl
Volker Lehmann
Hans Reisinger
Hermann Wendt
Assignee (at issue)
Siemens Aktiengesellschaft

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,140,177
App. No.
09/242,153
Filed
1999-02-09
Granted
2000-10-31
Kind
A