IP Library Granted Patent US 6,140,189
Granted Patent Utility
US 6,140,189 · App. 09/248,630

Method for fabricating a LOCOS MOS device for ESD protection

Inventors: Sheng Teng Hsu, Katsumasa Fujii, Hidechika Kawazoe, Jong-Jan Lee
Patented Case View Patent ↗
Granted: Oct 31, 2000 Filed: Feb 11, 1999
Inventors
Sheng Teng Hsu
Katsumasa Fujii
Hidechika Kawazoe
Jong-Jan Lee
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,140,189
App. No.
09/248,630
Filed
1999-02-11
Granted
2000-10-31
Kind
A