IP Library › Granted Patent US 6,141,244
Granted Patent Utility
US 6,141,244 · App. 09/388,696

Multi level sensing of NAND memory cells by external bias current

Inventors: Joseph G. Pawletko, Pau-Ling Chen, Shane Hollmer
Patented Case View Patent ↗
Granted: Oct 31, 2000 Filed: Sep 2, 1999
Inventors
Joseph G. Pawletko
Pau-Ling Chen
Shane Hollmer
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,141,244
App. No.
09/388,696
Filed
1999-09-02
Granted
2000-10-31
Kind
A