IP Library Granted Patent US 6,143,600
Granted Patent Utility
US 6,143,600 · App. 08/964,110

Method of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner

Inventor: Yoshihiro Takaishi
Patented Case View Patent ↗
Granted: Nov 7, 2000 Filed: Nov 5, 1997
Inventor
Yoshihiro Takaishi
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,143,600
App. No.
08/964,110
Filed
1997-11-05
Granted
2000-11-07
Kind
A