Granted Patent
Utility
US 6,144,047 · App. 09/014,108
Semiconductor device having impurity concentrations for preventing a parasitic channel
Inventor:
Minoru Higuchi
Patented Case
View Patent ↗
Granted: Nov 7, 2000
Filed: Jan 27, 1998
Inventor
Minoru Higuchi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.