Granted Patent
Utility
US 6,146,944 · App. 09/039,783
Large angle implantation to prevent field turn-on under select gate transistor field oxide region for non-volatile memory devices
Inventors:
Yue-Song He, Che-Hoo Ng, Pau-Ling Chen
Patented Case
View Patent ↗
Granted: Nov 14, 2000
Filed: Mar 16, 1998
Inventors
Yue-Song He
Che-Hoo Ng
Pau-Ling Chen
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.