Granted Patent
Utility
US 6,146,947 · App. 09/054,493
Insulated gate type field effect transistor and method of manufacturing the same
Inventors:
Naoto Okabe, Makio Iida, Norihito Tokura
Patented Case
View Patent ↗
Granted: Nov 14, 2000
Filed: Apr 3, 1998
Inventors
Naoto Okabe
Makio Iida
Norihito Tokura
Assignee (at issue)
Nippondenso Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.