Granted Patent
Utility
US 6,146,966 · App. 08/859,210
Process for forming a capacitor incorporated in a semiconductor device
Inventors:
Toshiyuki Hirota, Hirohito Watanabe, Fumiki Aiso, Shuji Fujiwara, Masanobu Zenke
Patented Case
View Patent ↗
Granted: Nov 14, 2000
Filed: May 20, 1997
Inventors
Toshiyuki Hirota
Hirohito Watanabe
Fumiki Aiso
Shuji Fujiwara
Masanobu Zenke
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.