Method of forming a non-volatile memory cell having a high coupling capacitance including forming an insulator mask, etching the mask, and forming a u-shaped floating gate

Granted: Dec 12, 2000 Filed: Jul 30, 1998

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.