Granted Patent
Utility
US 6,160,293 · App. 09/176,914
Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers
Inventors:
Hideaki Onishi, Kiyotaka Imai
Patented Case
View Patent ↗
Granted: Dec 12, 2000
Filed: Oct 22, 1998
Inventors
Hideaki Onishi
Kiyotaka Imai
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.