IP Library Granted Patent US 6,162,684
Granted Patent Utility
US 6,162,684 · App. 09/266,714

Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices

Inventors: Kent Kuohua Chang, David Chi, Chin-Yang Sun
Patented Case View Patent ↗
Granted: Dec 19, 2000 Filed: Mar 11, 1999
Inventors
Kent Kuohua Chang
David Chi
Chin-Yang Sun
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,162,684
App. No.
09/266,714
Filed
1999-03-11
Granted
2000-12-19
Kind
A