Granted Patent
Utility
US 6,163,057 · App. 09/298,167
Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
Inventor:
Ryuichi Okamura
Patented Case
View Patent ↗
Granted: Dec 19, 2000
Filed: Apr 23, 1999
Inventor
Ryuichi Okamura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.