Granted Patent
Utility
US 6,165,821 · App. 09/020,837
P channel radhard device with boron diffused P-type polysilicon gate
Inventors:
Milton J. Boden, Jr., Yuan Xu
Patented Case
View Patent ↗
Granted: Dec 26, 2000
Filed: Feb 9, 1998
Inventors
Milton J. Boden, Jr.
Yuan Xu
Assignee (at issue)
International Rectifier Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.