Granted Patent
Utility
US 6,165,834 · App. 09/074,638
Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
Inventors:
Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu
Patented Case
View Patent ↗
Granted: Dec 26, 2000
Filed: May 7, 1998
Inventors
Vishnu K. Agarwal
Garo Derderian
Gurtej S. Sandhu
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.