Granted Patent
Utility
US 6,171,939 · App. 09/348,389
Method for forming polysilicon gate electrode
Inventor:
Tony Lin
Patented Case
View Patent ↗
Granted: Jan 9, 2001
Filed: Jul 7, 1999
Inventor
Tony Lin
Assignees (at issue)
WINBOND ELECTRONICS CORP.
United Semiconductor Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.